Evolution of crystal imperfections during current-stress ageing tests of green InGaN light-emitting diodes

We perform ageing tests under high current on several green InGaN light-emitting diodes and compare the luminous homogeneities of chip surfaces, shapes of external quantum efficiency (EQE) curves, and electroluminescence spectra during different ageing stages. By curve fittings to the EQE curves, with the ABC and two-level models, we discover that a high injection current density can modify the defect configuration in quantum wells even at room temperature, as high-temperature annealing can. For In-rich devices, the removal of localization centers is another origin of luminous intensity decay in addition to the formation of point defects.

[1]  J. Liu,et al.  Degradation behaviors of GaN light-emitting diodes under high-temperature and high-current stressing , 2012, Microelectron. Reliab..

[2]  Piet Van Mieghem,et al.  Theory of band tails in heavily doped semiconductors , 1992 .

[3]  Gaudenzio Meneghesso,et al.  Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes , 2006 .

[4]  The Influence of a Piezoelectric Field on the Dynamic Performance of GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer , 2011, IEEE Electron Device Letters.

[5]  Jen-Inn Chyi,et al.  Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells , 2001 .

[6]  E. Schubert,et al.  Efficiency droop in light‐emitting diodes: Challenges and countermeasures , 2013 .

[7]  Lai Wang,et al.  Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization , 2010 .

[8]  Remis Gaska,et al.  Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells. , 2014, Optics express.

[9]  Yong Zhang,et al.  Spatial resolution versus data acquisition efficiency in mapping an inhomogeneous system with species diffusion , 2015, Scientific Reports.

[10]  Gaudenzio Meneghesso,et al.  Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes , 2014 .

[11]  Zhiqiang Liu,et al.  Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes , 2012 .

[12]  Jinn-Kong Sheu,et al.  Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical–Optical Pump–Probe Technique , 2011, IEEE Transactions on Electron Devices.

[13]  Gang Wang,et al.  Efficiency degradation behaviors of current/thermal co-stressed GaN-based blue light emitting diodes with vertical-structure , 2012 .

[14]  Gilles Lerondel,et al.  Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes , 2015, Scientific Reports.

[15]  T. T. Chen,et al.  Electroluminescence enhancement in InGaN light-emitting diode during the electrical stressing process. , 2014, Optics express.

[16]  Z. Liu,et al.  The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters , 2015 .

[17]  Gaudenzio Meneghesso,et al.  Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects , 2015, Microelectron. Reliab..

[18]  Shuji Nakamura,et al.  The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes , 1998 .

[19]  R. Chang,et al.  Indium penetration through thermally grown silicon oxide , 2015 .

[20]  E. Fred Schubert,et al.  On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms , 2011 .

[21]  Ziquan Guo,et al.  Defects dynamics during ageing cycles of InGaN blue light-emitting diodes revealed by evolution of external quantum efficiency--current dependence. , 2015, Optics express.