论文信息 - How Photoinduced Gate Screening and Leakage Currents Dynamically Change the Fermi Level in 2D Materials - 字舞流文

How Photoinduced Gate Screening and Leakage Currents Dynamically Change the Fermi Level in 2D Materials

C. Stampfer | B. Beschoten | T. Taniguchi | F. Volmer | Bowen Yang | Jing Shi | M. Lohmann | L. Bartels | M. Ersfeld | M. Heithoff | L. Rathmann | Luca Kotewitz | Kenji Watanabe