Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping

The enhanced red photoluminescence (PL) from Si-rich amorphous silicon carbide (a-SiCx) films was analyzed in this study using nitrogen doping. The increase in nitrogen doping concentration in films results in the significant enhancement of PL intensity by more than three times. The structure and bonding configuration of films were investigated using Raman and Fourier transform infrared absorption spectroscopies, respectively. The PL and analysis results of bonding configurations of films suggested that the enhancement of red PL is mainly caused by the reduction in nonradiative recombination centers as a result of the weak Si–Si bonds substituted by Si–N bonds.

[1]  W. Li,et al.  Enhanced subband light emission from Si quantum dots/SiO2 multilayers via phosphorus and boron co-doping. , 2022, Optics express.

[2]  P. Chu,et al.  Engineering CsPbBr3 quantum dots with efficient luminescence and stability by damage-free encapsulation with a-SiCx:H , 2021 .

[3]  Xiaofeng Ma,et al.  Enhancing light emission of Si nanocrystals by means of high-pressure hydrogenation. , 2020, Optics express.

[4]  Shuangyi Zhao,et al.  Silicon nanocrystals: unfading silicon materials for optoelectronics , 2019, Materials Science and Engineering: R: Reports.

[5]  J. Robertson,et al.  Defect Emission and Optical Gain in SiCxOy:H Films. , 2017, ACS applied materials & interfaces.

[6]  Meng Zhou,et al.  Silicon Nanoparticles with Surface Nitrogen: 90% Quantum Yield with Narrow Luminescence Bandwidth and the Ligand Structure Based Energy Law. , 2016, ACS nano.

[7]  Á. Gali,et al.  Dominant luminescence is not due to quantum confinement in molecular-sized silicon carbide nanocrystals. , 2015, Nanoscale.

[8]  Lu Jin,et al.  Reduction of the efficiency droop in silicon nitride light-emitting devices by localized surface plasmons , 2013 .

[9]  B. Kim,et al.  Enhancement in electron transport and light emission efficiency of a Si nanocrystal light-emitting diode by a SiCN/SiC superlattice structure , 2013, Nanoscale Research Letters.

[10]  P. Chu,et al.  Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride. , 2012, Optics letters.

[11]  J. Abelson,et al.  Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing , 2011 .

[12]  Junzhuan Wang,et al.  Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism , 2010 .

[13]  N. Nursam,et al.  Effect of deposition conditions and thermal annealing on the charge trapping properties of SiNx films , 2010 .

[14]  Gong-Ru Lin,et al.  Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes , 2010 .

[15]  V. Lysenko,et al.  Structure, paramagnetic defects and light-emission of carbon-rich a-SiC:H films , 2008 .

[16]  Paul K. Chu,et al.  Low-dimensional SiC nanostructures: Fabrication, luminescence, and electrical properties , 2006 .

[17]  W. Li,et al.  Hydrogen-induced recovery of photoluminescence from annealed a‐Si:H∕a‐SiO2 multilayers , 2005 .

[18]  M. Molinari,et al.  Improvement of the photoluminescence properties in a-SiNx films by introduction of hydrogen , 2001 .

[19]  L. D. Negro,et al.  Optical absorption and luminescence properties of wide-band gap amorphous silicon based alloys , 2000 .

[20]  Y. Tawada,et al.  Emission of blue light from hydrogenated amorphous silicon carbide , 1994, Nature.