Hooge noise parameter of epitaxial n-GaN on sapphire

Abstract The mobility and the carrier concentration of the epitaxial n-GaN are obtained experimentally as a function of the temperature between 300 and 15 K, and are found to be in good agreement with those derived from the numerical analyses assuming a certain amount of the compensation ratio. The sample available at present has a rather poor mobility compared with that expected from an ideal perfect crystal, and we must assume a comparatively large amount of the compensation in the numerical analyses. The typical 1/f noise characteristics are also observed by forming an ideal Ohmic contact to the devices at the optimum alloying temperature and its period. Based on the introduced amount carrier concentration and the mobility together with the contact conditions, the Hooge noise parameters are derived experimentally between 100 and 300 K. Experimental data reported so far are also summarized as a function of the normalized mobility.

[1]  M. Shur,et al.  Low Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors , 2001 .

[2]  Michael S. Shur,et al.  AlGaN/GaN high electron mobility field effect transistors with low 1/f noise , 1998 .

[3]  Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy , 2001 .

[4]  L.K.J. Vandamme,et al.  Experimental studies on 1/f noise , 1981 .

[5]  Hans L. Hartnagel,et al.  Quantum 1/f noise in epitaxial lateral overgrown GaN: piezoelectric effect , 2002 .

[6]  David C. Look,et al.  Electrical Characterization of GaAs Materials and Devices , 1989 .

[7]  V. Rao,et al.  Flicker noise in GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistors , 1998, IEEE Electron Device Letters.

[8]  M. Shur,et al.  Low Frequency Noise in n-GaN with High Electron Mobility , 1999 .

[9]  Lester F. Eastman,et al.  The role of dislocation scattering in n-type GaN films , 1998 .

[10]  Michael S. Shur,et al.  Low-frequency noise in AlGaN'GaN heterojunction field effect transistors on SiC and sapphire substrates , 2000 .

[11]  Peter Händel,et al.  Quantum 1/f noise associated with ionized impurity scattering and electron-phonon scattering in condensed matter , 1985 .

[12]  H. Temkin,et al.  Low-frequency noise in AlGaN/GaN heterostructure field effect transistors , 1998, IEEE Electron Device Letters.

[13]  David C. Look,et al.  Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements , 1997 .

[14]  T. Matsui,et al.  Evaluation of Al/Ti/n-GaN Contacts by Current Noise Measurements , 2003 .

[15]  S. Nakamura,et al.  Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes , 1994 .

[16]  Toshimitsu Musha,et al.  Dynamics of energy partition among coupled harmonic oscillators in equilibrium , 2005 .

[17]  Masahiko Sano,et al.  InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices , 1997 .

[18]  Umesh K. Mishra,et al.  The toughest transistor yet [GaN transistors] , 2002 .

[19]  Munecazu Tacano,et al.  Comparison of 1/ƒ noise of AlGaAs/GaAs HEMTs and GaAs MESFETs , 1991 .

[20]  Alexander A. Balandin,et al.  Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications , 1999 .

[21]  Hadis Morkoç,et al.  Nitride Semiconductors and Devices , 1999 .

[22]  C. Surya,et al.  Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers , 2001 .

[23]  Theeradetch Detchprohm,et al.  Analysis of deep levels in n‐type GaN by transient capacitance methods , 1994 .

[24]  Michael S. Shur,et al.  Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates , 2000 .

[25]  J. Kwak,et al.  Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphology and thermal stability , 2000 .

[26]  M. Shur,et al.  Highly Doped Thin-Channel GaN-Metal-Semiconductor Field-Effect Transistors , 2001 .

[27]  Alexander A. Balandin,et al.  Investigation of flicker noise and deep-levels in GaN/AlGaN transistors , 2000 .