Effects of longitudinal field on transmitted near field in doped semi-infinite semiconductors with a surface conducting sheet

A unique structure composed of a half-space of air and a semi-infinite doped bulk GaAs covered by an InAs conducting interface sheet is proposed, from which the physics behind the interplay between the effects of transverse sheet current and the longitudinal three-dimensional plasma waves, as well as the effect of evanescent modes, can be explored. The in-plane and perpendicular components of a transverse field are modified by the inclusion of the InAs conducting sheet and a longitudinal field, and the coupling between transverse and longitudinal oscillations of an electromagnetic field parallel and perpendicular to the conducting sheet is made possible by the doped GaAs bulk. Based on this structure, a spatially nonlocal dynamic theory is derived, including the coupling between the transverse and longitudinal oscillations, the image-potential and retardation effects, and the effects of evanescent modes. The existence of the InAs conducting sheet is found to reduce the transmitted field by reflection from...

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