The effect of soft bake temperature on the polymerization of SU-8 photoresist

This paper presents the results of an investigation of the influence of soft baking temperature on the lithographic performance of the negative photoresist SU-8. The work was initiated in order to obtain a lithographic resolution suitable for integration of diffractive optical components for near-infrared wavelengths. The study was carried out on 40 µm SU-8 layers on thermally oxidized silicon wafers, a widespread platform for integration of microfluidic systems and waveguides. A series of experiments covering soft bake temperatures in the range 65–115 °C were performed under otherwise identical processing conditions. The influence of the soft bake temperature on polymerization temperature as well as cracking, lithographic resolution and hardness of the resist was investigated. The kinetics of the polymerization process were observed to change with soft bake temperature, leading to changes in sensitivity and contrast of the resist, as well as changes in the material strength of the developed structures. Soft baking at 65 °C proved superior with respect to all the inspected properties, providing a sample showing full resolution of 3.8 µm wide trenches and no stress-related cracking.

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