Investigation on Thick Silicon Dioxide Films Evaporation by Electron Beam Evaporation

WT5”BZ]:Thick silicon dioxide films have been evaporated from electron beam evaporation at temperature around 200 ℃.The characteristics of the SiO 2 films can be stablized after high temperature annealing processing.When evaporating.the composition of SiO 2 films was adjusted by introduing O 2 in the evaporation chamber,and the refractive index of SiO 2 films can be controlled.The SiO 2 films with plus 1 μm thickness are fabricated after several steps of evaporation and annealing. [WT5”HZ]