Optimization of modulation ratio and insertion loss in reflective electroabsorption modulators

We show theoretically that the maximum modulation ratio in Fabry–Perot reflective electroabsorption modulators for a given insertion loss is solely a function of the ratio of the maximum to minimum absorption. We increase this ratio by using thinner quantum wells than are conventionally used and obtain significantly improved performance. We obtain an insertion loss of 1.2 dB and a modulation ratio of 7.5 with a 5 V operating bias.