Investigation of domain evolution in sublimation epitaxy of SiC
暂无分享,去创建一个
[1] E. Janzén,et al. High Growth Rate of α-SiC by Sublimation Epitaxy , 1997 .
[2] A. Ellison,et al. Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers , 1997 .
[3] P. Fewster. Reciprocal Space Mapping , 1997 .
[4] E. Janzén,et al. Crystalline imperfections in 4H SiC grown with a seeded Lely method , 1994 .
[5] E. Janzén,et al. Structural macro-defects in 6H-SiC wafers , 1993 .