HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy
暂无分享,去创建一个
Olivier Renault | P. Besson | François Martin | D. Blin | P. Besson | J. Damlencourt | F. Martin | D. Blin | O. Renault | N. Barrett | Nicholas Barrett | J.-F. Damlencourt | D. Samour | S. Marthon | S. Marthon | D. Samour
[1] V. Cosnier,et al. HfO2–SiO2 interface in PVD coatings , 2001 .
[2] Eduard A. Cartier,et al. Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films , 2001 .
[3] Raghaw Rai,et al. Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2 , 2002 .
[4] C. Rao,et al. XPES studies of oxides of second- and third-row transition metals including rare earths , 1980 .
[5] Yoshimichi Ohki,et al. Plasma-enhanced chemical vapor deposition and characterization of high-permittivity hafnium and zirconium silicate films , 2002 .
[6] H. Tseng,et al. Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO2 films annealed in O2 , 2002 .
[7] F. J. Himpsel,et al. Microscopic structure of the SiO 2 /Si interface , 1988 .
[8] C. Morant,et al. An XPS study of the initial stages of oxidation of hafnium , 1990 .
[9] Je-Hun Lee,et al. Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition , 2002 .
[10] E. Garfunkel,et al. Soft x-ray photoemission studies of the HfO2/SiO2/Si system , 2002 .
[11] Mark L. Green,et al. Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits , 2001 .