论文信息 - Metamorphic InAs/InGaAs QWs with electron mobilities exceeding 7×105cm2/Vs - 字舞流文

Metamorphic InAs/InGaAs QWs with electron mobilities exceeding 7×105cm2/Vs

G. Biasiol | J. Plaisier | R. Ciancio | A. Benali | P. Rajak | S. Heun

[1] M. Manfra,et al. Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates , 2017, 1707.00031.

[2] T. Ihn,et al. Scattering mechanisms of highest-mobility InAs /Al x Ga 1 -x Sb quantum wells , 2016, 1612.06782.

[3] Luca Rebuffi,et al. MCX: a Synchrotron Radiation Beamline for X‐ray Diffraction Line Profile Analysis , 2014 .

[4] C. Jacoboni,et al. Transport anisotropy in In 0.75 Ga 0.25 As two-dimensional electron gases induced by indium concentration modulation , 2008 .

[5] F. Romanato,et al. Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells , 2005 .

[6] F. Capotondi,et al. Scattering mechanisms in undoped In0.75Ga0.25As/In0.75Al0.25As two-dimensional electron gases , 2005 .

[7] Martin Hÿtch,et al. Quantitative measurement of displacement and strain fields from HREM micrographs , 1998 .

[8] G. Snider,et al. A self‐consistent solution of Schrödinger–Poisson equations using a nonuniform mesh , 1990 .

[9] C. Koch. Determination of core structure periodicity and point defect density along dislocations , 2002 .