Significance of Charge Sharing in Causing Threshold Voltage Roll-Off in Highly Doped 0.1-μm Si MOSFETs and Its Suppression by Atomic Layer Doping(ALD)

An investigation of the influence of substrate dopant concentration on the short channel effects in 0.1-pm nMOSFETs shows that threshold voltage roll-off is not suppressed by heavy doping and that there is a clear reduction in subthreshold swing at dopant concentrations higher than lxl0" cm''. These results can be explained by the charge sharing concept and, we demonstrate the excellent scalability of the ALD (atomic-layer doped) MOSFET, in which the charge slraring can be effectively suppressed.