The influence of heavily doped buried layer implants on electrostatic discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS SiGe technology

This paper will demonstrate the effect of heavily doped buried layers (HDBL) on electrostatic discharge protection, latchup, and silicon germanium (SiGe) heterojunction bipolar transistors (HBT). Heavily doped buried layers (HDBL) implants, in prior publications, have demonstrated improvements in latchup robustness in low-doped substrate wafer technology. The influence of HDBL on MOSFET ESD protection has also been demonstrated. In this paper, the focus is the influence of HDBL implants on BiCMOS SiGe HBT devices and derivatives from a functionality, ESD and latchup perspective in a BiCMOS SiGe technology as well as relevance to RF and MS CMOS technology. Experimental results will be shown for different heavily doped buried layer implant doses and energies.

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