Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon
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E. Garutti | J. Schwandt | I. Pintilie | L. Makarenko | M. Moll | L. Filip | E. Fretwurst | Y. Gurimskaya | A. Himmerlich | C. Liao | Zheng Li | E. Garutti