Investigating surface stress: Surface loss in ultrathin single-crystal silicon cantilevers
暂无分享,去创建一个
[1] Boland. Structure of the H-saturated Si(100) surface. , 1990, Physical review letters.
[2] J. Boland. Scanning tunneling microscopy study of the adsorption and recombinative desorption of hydrogen from the Si(100)‐2×1 surface , 1992 .
[3] Harald Ibach,et al. The role of surface stress in reconstruction, epitaxial growth and stabilization of mesoscopic structures , 1997 .
[4] Thomas Thundat,et al. Adsorption-induced surface stress and its effects on resonance frequency of microcantilevers , 1995 .
[5] Miura,et al. Atomic configuration of hydrogenated and clean Si(110) surfaces. , 1986, Physical review. B, Condensed matter.
[6] Schell-Sorokin Aj,et al. Mechanical stresses in (sub)monolayer epitaxial films. , 1990 .
[7] Harry C. Gatos,et al. Surface stress and the normal mode of vibration of thin crystals :GaAs , 1975 .
[8] N. C. MacDonald,et al. Dissipation measurements of vacuum-operated single-crystal silicon microresonators , 1995 .
[9] S. Jeng,et al. Efficiency of oxygen plasma cleaning of reactive ion damaged silicon surfaces , 1988 .
[10] H. Ibach,et al. Adsorbate‐induced surface stress , 1994 .
[11] J. Boland. Role of bond-strain in the chemistry of hydrogen on the Si(100) surface , 1992 .
[12] B. Anthony,et al. Very low defect remote hydrogen plasma clean of Si (100) for homoepitaxy , 1990 .
[13] Grossmann,et al. Giant Surface Stress in Heteroepitaxial Films: Invalidation of a Classical Rule in Epitaxy. , 1996, Physical review letters.