论文信息 - Projecting CMOS circuit hot-carrier reliability from DC device lifetime

Projecting CMOS circuit hot-carrier reliability from DC device lifetime

We present generalized hot-carrier-reliability technology qualification and circuit design rules. The inverse duty factors, i.e. DC to AC time conversion factors for N- and P-MOSFETS are found to be 4/ft/sub rise/, and 10/ft/sub fall/ or 120 and 300 respectively. Typically, /spl Deltaspl tau/spl tau/ of an inverter is 1/4 /spl Delta/I/sub dI/sub d/ of NMOSFET minus 1/2 /spl Delta/I/sub dI/sub d/ of PMOSFET. The proposed design rules are valid for both 5 V and 3.3 V technologies and can be easily incorporated into existing DC lifetime prediction routines.<<ETX>>

Chenming Hu | K. N. Quader | Ping-Keung Ko

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