论文信息 - Optimization of SiCOH dielectrics for integration in a 90nm CMOS technology

Optimization of SiCOH dielectrics for integration in a 90nm CMOS technology

The research integration of SiCOH films in a reliable ULSI integrated circuit chip imposes many requirements on the properties of the dielectric material. This paper describes a selection and optimization process for choosing the best film to be integrated in Cu wiring levels of ULSI CMOS chips in the 90 nm technology node.

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