论文信息 - High gain InGaAs/InP heterostructure bipolar transistors grown by gas source molecular beam epitaxy

High gain InGaAs/InP heterostructure bipolar transistors grown by gas source molecular beam epitaxy

The capability for high quality heterostructure bipolar transistors with structures in the InGaAs/InP system has been demonstrated by gas source molecular beam epitaxy. These devices are characterized by high current gain, β∼1100, only weakly dependent on the collector current. The current‐voltage characteristics of the emitter base junction exhibit an ideality factor n=1.2 over a wide bias range.

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