Ku-band power amplifier using pseudomorphic HEMT devices for improved efficiency

A two-stage Ku-band power amplifier demonstrating state-of-the-art power gain and efficiency has been developed using 0.25 mu m gate-length, 1600 mu m gate-width double-heterojunction pseudomorphic HEMT (high electron mobility transistor) devices. At 12 GHz, output powers of 2.2 and 2.7 watts have been achieved, with power-added efficiencies of 39% and 36% respectively. An associated gain of 14 dB has been demonstrated.<<ETX>>