A self-powered solar-blind photodetector based on a MoS2/β-Ga2O3 heterojunction

High-performance solar-blind photodetectors have attracted significant attention due to their great significance in military and industrial applications. In this work, a high-performance self-powered solar-blind photodetector based on a MoS2/β-Ga2O3 heterojunction was demonstrated. The photodetector exhibits a remarkable rectifying characteristic with a rectification ratio over 105 and excellent solar-blind photoresponse properties with a cut-off wavelength of 260 nm and a high rejection ratio of 1.6 × 103. Under light illumination of 245 nm (20.1 μW cm−2), the MoS2/β-Ga2O3 heterojunction photodetector shows a responsivity of 2.05 mA W−1 and a specific detectivity of 1.21 × 1011 Jones at zero bias voltage. Such high-performances of this photodetector are superior to other previously reported β-Ga2O3 based photodetectors, and provide a guideline to design high-performance self-powered solar-blind photodetectors.

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