论文信息 - Thermal stability of GaN investigated by low‐temperature photoluminescence spectroscopy

Thermal stability of GaN investigated by low‐temperature photoluminescence spectroscopy

We have studied the thermal behavior of 1‐μm‐thick GaN films grown by plasma‐enhanced molecular beam epitaxy. Samples were annealed at elevated temperatures in a nitrogen environment and were characterized by low‐temperature photoluminescence (PL). After GaN samples were annealed at up to 700 °C, the free‐exciton transition PL line intensity improved. This PL line intensity degraded when annealing temperatures reached 900 °C. After annealing at 900 °C, GaN samples with inferior crystalline quality exhibited a line at 2.3 eV attributed to point defects and antisite defects.

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