Structures and Electrical Properties of Ag – Tetracyanoquinodimethane Organometallic Nanowires

Ag–tetracyanoquinodimethane (Ag–TCNQ) nanostructures are synthesized using both solution reaction in acetonitrile and a novel vacuum-saturated vapor reaction method. Experiments show that the latter synthesis method produces Ag–TCNQ nanowires with better uniformity and higher aspect ratio. These nanowires, having diameters around 100 nm and lengths about 5 m, could serve as potential building blocks of nanoscale electronics. Nanodevices based on these nanowires are fabricated using the electron-beam lithography technique. Electrical transport study shows reproducible – hysteresis with a change in resistance of four orders of magnitude, demonstrating electrical memory effect. This electrical bistability makes Ag–TCNQ nanowires a promising candidate for future applications in ultrahigh-density information storage.

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