High performance BiCMOS process integration: trends, issues, and future directions

This work will review trends for high performance BiCMOS technology. A section comparing CMOS and Bipolar for RF attempts to forecast the future need for BiCMOS. This is followed by the status on Bipolar scaling trends and directions. A detailed section on BiCMOS process integration from starting substrate to final metal comprises the bulk of the paper. Key figures-of-merit for several BiCMOS processes in a variety of different application areas are summarized.

[1]  John D. Cressler,et al.  Si/SiGe epitaxial-base transistors. II. Process integration and analog applications , 1995 .

[2]  Robert A. Proctor,et al.  Design methodology for IBM ASIC products , 1996, IBM J. Res. Dev..

[3]  Zhixin Yan,et al.  Gate-controlled lateral PNP BJT: characteristics, modeling and circuit applications , 1997 .

[4]  James D. Warnock,et al.  Silicon bipolar device structures for digital applications: technology trends and future directions , 1995 .

[5]  J.M.C. Stork,et al.  Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology , 1990, International Technical Digest on Electron Devices.

[6]  Chih-Tang Sah,et al.  Degradation of bipolar transistor current gain by hot holes during reverse emitter-base bias stress , 1996 .

[7]  R.G. Meyer,et al.  Transistor design for low distortion at high frequencies , 1976, IEEE Transactions on Electron Devices.

[8]  Paul G. Y. Tsui,et al.  A versatile half-micron complementary BiCMOS technology for microprocessor-based smart power applications , 1995 .

[9]  A.R. Alvarez Future Trends In BiCMOS Technology , 1991, ESSDERC '91: 21st European Solid State Device Research Conference.

[10]  A. R. Alvarez Introduction To BiCMOS , 1990 .

[11]  D. Harame,et al.  Epitaxial-base transistors with ultrahigh vacuum chemical vapor deposition (UHV/CVD) epitaxy: enhanced profile control for greater flexibility in device design , 1989, IEEE Electron Device Letters.

[12]  D.D. Tang,et al.  A scaled 0.25- mu m bipolar technology using full e-beam lithography , 1992, IEEE Electron Device Letters.

[13]  Y. Kiyota,et al.  Ultra-thin-base Si bipolar transistor using rapid vapor-phase direct doping (RVD) , 1992 .

[14]  D.L. Harame,et al.  Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace , 1996, International Electron Devices Meeting. Technical Digest.