Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 $\mu$ m

An InP-based p-i-n photodiode with optical response out to 3.4 μm was designed and grown by molecular beam epitaxy (MBE). One hundred pairs of 7-nm In<sub>0.34</sub>Ga<sub>0.66</sub>As/5-nm GaAs<sub>0.25</sub>Sb<sub>0.75</sub> quantum wells strain compensated to InP were used as the absorption region. The device showed a dark current density of 9.6 mA/cm<sup>2</sup> under -0.5-V reverse bias, a responsivity of 0.03 A/W, and a detectivity of 2.0 × 10<sup>8</sup> cm·Hz<sup>1/2</sup>·W<sup>-1</sup> at 3 μm at 290 K.

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