Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN

The properties of nonpolar a-plane InGaN∕GaN multiple-quantum wells (MQWs), grown simultaneously on lateral epitaxially overgrown (LEO) a-plane GaN and planar a-plane GaN, were studied. High-resolution x-ray diffraction analysis revealed that the In mol fraction in the MQWs grown on LEO-GaN was significantly lower than that on planar a-plane GaN. The lower In incorporation was confirmed by microphotoluminescence (μ-PL) and wide-area photoluminescence measurements, which showed a redshift of the MQW emission from 413 nm for the nearly defect-free laterally overgrown regions to 453 nm for the defective “window” regions of the LEO a-plane GaN, to 478 nm for the high-defect density planar a-plane GaN. μ-PL measurements also demonstrated that the emission from the nearly defect-free wings of the LEO a-plane GaN was more than ten times stronger than the emission from the defective windows.

[1]  James S. Speck,et al.  Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth , 2004 .

[2]  M. Asif Khan,et al.  Optically Pumped Lasing at 353 nm Using Non-polar a-plane AlGaN Multiple Quantum Wells over r-plane Sapphire , 2004 .

[3]  David Vanderbilt,et al.  Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997 .

[4]  Isamu Akasaki,et al.  Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells , 1997 .

[5]  S. Denbaars,et al.  Threading dislocation reduction via laterally overgrown nonpolar (112̄0)a-plane GaN , 2002 .

[6]  James S. Speck,et al.  Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak , 2004 .

[7]  James S. Speck,et al.  Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire , 2002 .

[8]  Shuji Nakamura,et al.  The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .

[9]  James S. Speck,et al.  STRUCTURAL ORIGIN OF V-DEFECTS AND CORRELATION WITH LOCALIZED EXCITONIC CENTERS IN INGAN/GAN MULTIPLE QUANTUM WELLS , 1998 .

[10]  M. Reiche,et al.  Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes , 2000, Nature.

[11]  S. Denbaars,et al.  Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition , 2003 .

[12]  James S. Speck,et al.  Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition , 2004 .

[13]  H. M. Ng,et al.  Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates , 2002 .

[14]  James S. Speck,et al.  Nonpolar InxGa1-xN/GaN(1(1)over-bar00) multiple quantum wells grown on gamma-LiAlO2(100) by plasma-assisted molecular-beam epitaxy , 2003 .