论文信息 - Oxidation induced stresses and some effects on the behavior of oxide films

Oxidation induced stresses and some effects on the behavior of oxide films

The elastic and viscoelastic stresses created during the oxidation of curved surfaces are calculated. The stress state and amplitude are shown to depend sensitively upon the oxidation site (interface or surface) and the oxidation strain (uniaxial or dilational). The viscoelastic stresses depend, in addition, on the rate of oxidation, vis‐a‐vis the viscosity of the oxide. In most cases, the stresses increase rapidly as the radius of curvature of the surface decreases. The influence of the stresses on several important oxidation phenomena are discussed. Specifically, corner effects on the oxidation rate, cracking and spalling of the oxide, and plastic deformation of the substrates are briefly addressed.

A. Evans | C. Hsueh

[1] J. Giber,et al. Temperature dependence of the internal mechanical stresses in the Si-SiO2 system , 1982 .

[2] T. E. Mitchell,et al. The observation of stress effects during the high temperature oxidation of iron , 1982 .

[3] R. B. Marcus,et al. The Oxidation of Shaped Silicon Surfaces , 1982 .

[4] S. M. Hu,et al. Flaws in Sidewall Oxides Grown on Polysilicon Gate , 1982 .

[5] L. Wilson. Numerical Simulation of Gate Oxide Thinning in MOS Devices , 1982 .

[6] E. P. EerNisse,et al. Stress in thermal SiO2 during growth , 1979 .

[7] Hyman Joseph Levinstein,et al. Thermal stresses and cracking resistance of dielectric films (SiN, Si3N4, and SiO2) on Si substrates , 1978 .

[8] E. P. EerNisse,et al. Viscous flow of thermal SiO2 , 1977 .

[9] R. Jaccodine,et al. Measurement of Strains at Si‐SiO2 Interface , 1966 .

[10] A. S. Grove,et al. General Relationship for the Thermal Oxidation of Silicon , 1965 .

[11] W. A. Pliskin,et al. Evidence for Oxidation Growth at the Oxide‐Silicon Interface from Controlled Etch Studies , 1964 .

[12] Paul J. Jorgensen,et al. Effect of an Electric Field on Silicon Oxidation , 1962 .

[13] W. G. Spitzer,et al. The mechanisms for silicon oxidation in steam and oxygen , 1960 .

[14] S. Rice,et al. Effect of Pressure on Self‐Diffusion in Lead , 1959 .

[15] W. Brantley. Calculated elastic constants for stress problems associated with semiconductor devices , 1973 .