Adaptive dv/dt and di/dt control for isolated gate power devices

This paper describes an adaptive gate control technique and a driver concept for isolated gate power devices. The proposed technique modulates the gate current of the power devices to control dv/dt and di/dt during a switching transition. It uses different time intervals, which are adjusted successively. Delays of the driver and the control section are compensated and therefore the proposed technique is applicable to control fast switching transients. To detect the di/dt during switching, a feedback path is implemented using parasitic inductances in the power section of the converter. By application of this method, we achieved the following properties: low propagation delays, reduced voltage overshoots, improved EMI and reduced switching power losses. The proposed method is applicable to converters with half-bridge, full-bridge and three-phase bridge configuration.

[1]  Nadir Idir,et al.  Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors , 2006, IEEE Transactions on Power Electronics.

[2]  C. Paul.  Introduction to electromagnetic compatibility , 2005 .

[3]  Satoki Takizawa,et al.  An active control gate drive circuit for IGBTs to realize low-noise and snubberless system , 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.

[4]  A. Huang.  New unipolar switching power device figures of merit , 2004, IEEE Electron Device Letters.

[5]  Xingbi Chen,et al.  A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate , 2010, IEEE Transactions on Electron Devices.

[6]  P. Kumar,et al.  Performance Analysis of Trench Power MOSFETs in Synchronous Buck Converter Applications , 2007, APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition.

[7]  B. Jayant Baliga,et al.  Fundamentals of Power Semiconductor Devices , 2008 .

[8]  K. Jezernik,et al.  Conductive EMI reduction in switched-mode power converters , 2005, Proceedings of the IEEE International Symposium on Industrial Electronics, 2005. ISIE 2005..

[9]  A. Galluzzo,et al.  Switching-behavior improvement of insulated gate-controlled devices , 1997 .

[10]  Nadir Idir,et al.  Lowering the drawbacks of slowing down di/dt and dv/dt of insulated gate transistors , 2002 .

[11]  Satoki Takizawa,et al.  A new di/dt control gate drive circuit for IGBTs to reduce EMI noise and switching losses , 1998, PESC 98 Record. 29th Annual IEEE Power Electronics Specialists Conference (Cat. No.98CH36196).

[12]  A. Heringa,et al.  Gate-drain charge analysis for switching in power trench MOSFETs , 2004, IEEE Transactions on Electron Devices.

[13]  T. Jahns,et al.  Flexible dv/dt and di/dt control method for insulated gate power switches , 2001, Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248).