论文信息 - DC and Transient Performance of 4H-SiC Double-Implant MOSFETs

DC and Transient Performance of 4H-SiC Double-Implant MOSFETs

SiC vertical MOSFETs were fabricated and characterized, achieving blocking voltages around 1 kV and specific on-resistances as low as RSP,ON=8.3 mOmegamiddotcm2. DC and transient characteristics are shown. Room and elevated temperature (up to 200degC) 600 V/5 A inductive switching performance of the SiC MOSFETs are shown with turn-on and turn-off transients of approximately 20-40 ns.

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