论文信息 - Application of the atomic layer etching technique for the formation of SiC-based field emitters - 字舞流文

Application of the atomic layer etching technique for the formation of SiC-based field emitters

I. N. Kots | R. Tominov | O. Ageev | V. S. Klimin | I. Kots | A. A. Rezvan | Y. N. Varzarev