论文信息 - A high current drop GaAs bistable switch

A high current drop GaAs bistable switch

A current drop of 41.5 percent and a switching time of 110 ps is reported for a 10-µm supercritically doped n+-n-n+GaAs transferred electron device operated as a bistable switch into a 25-Ω resistive load. An investigation to check that no microwave oscillations occur is presented.

[1] H. Thim,et al. Experimental verification of bistable switching with Gunn diodes , 1971 .

[2] P. Jeppesen,et al. The influence of diffusion on the stability of the supercritical transferred electron amplifier , 1972 .

[3] H. Thim,et al. Stability and switching in overcritically doped Gunn diodes , 1971 .

[4] P. Jeppesen,et al. A simple analysis of the stable field profile in the supercritical TEA , 1973 .