A Bulk Built-In Voltage Sensor to Detect Physical Location of Single-Event Transients

A novel built-in voltage sensor circuit has been developed in 90-nm CMOS technology to characterize temporal and physical locations of ion hits. The sensing circuit only has 8 transistors, with very small area and power overhead. Simulations and laser experimental results illustrate the effectiveness of the sensing circuit. The sensors can be implemented in grid formation to systematically detect the ion hits in real time.

[1]  G. Wirth,et al.  The Bulk Built In Current Sensor Approach for Single Event Transient Detection , 2007, 2007 International Symposium on System-on-Chip.

[2]  Marcelo Lubaszewski,et al.  Using Bulk Built-In Current Sensors and recomputing techniques to mitigate transient faults in microprocessors , 2009, 2009 10th Latin American Test Workshop.

[3]  Michael Nicolaidis,et al.  SEU-tolerant SRAM design based on current monitoring , 1994, Proceedings of IEEE 24th International Symposium on Fault- Tolerant Computing.

[4]  Fernanda Gusmão de Lima Kastensmidt,et al.  Using Bulk Built-in Current Sensors to Detect Soft Errors , 2006, IEEE Micro.

[5]  Lorenzo Alvisi,et al.  Modeling the effect of technology trends on the soft error rate of combinational logic , 2002, Proceedings International Conference on Dependable Systems and Networks.

[6]  B.L. Bhuva,et al.  Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS , 2007, IEEE Transactions on Nuclear Science.