We report the development of theoretical and experimental study of the transient behaviors of picosecond photoconductivity. A simple photoconductor with conventional neutrality analysis is described and stripline electrodes are used for high speed operation1. The carrier transport mechanism in a photodiode is modeled, which is in a non-neutrality condition2. This leads into the analysis of the high field, high speed transient behaviors of picosecond photoconductivity by solving the transport equation in its original form without neutrality approximation. Indeed, the photogenerated carrier are found to travel in opposite directions. Future analysis will be emphasized on interaction of this behavior with external circuits.
[1]
Kenneth K. Li,et al.
Picosecond Ingaas PIN Photodiode For 0.95um-1.65um Operation
,
1985,
Photonics West - Lasers and Applications in Science and Engineering.
[2]
Kenneth K. Li,et al.
CHAPTER 6 – Pulse Forming with Optoelectronic Switches*
,
1984
.
[3]
C. W. Gabel,et al.
Picosecond electro‐optic sampling system
,
1982
.
[4]
D. Auston.
Picosecond optoelectronic switching and gating in silicon
,
1975
.
[5]
David M. Bloom,et al.
Electro-optic sampling with picosecond resolution
,
1983
.