论文信息 - An analysis of high-frequency noise in RF active CMOS mixers

An analysis of high-frequency noise in RF active CMOS mixers

An analysis of high-frequency noise in RF active CMOS mixers including single-balanced and double-balanced architectures is presented. The analysis investigates the contribution of non-white gate-induced noise to the output noise power as well as the spot noise figure (NF) of the RF CMOS mixer. It accounts for the non-zero correlation between the gate-induced noise and the channel’s thermal noise. The noise contribution of the RF transconductor and the switching pair to the output noise power is studied. Experimental results verify the accuracy of the analytical model.

Payam Heydari | P. Heydari

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