8Gb 3D DDR3 DRAM using through-silicon-via technology

With the emergence of various through-silicon-via (TSV) applications, TSV production volumes are expected to ramp up by 2010. This is because TSV technology provides many benefits including high density, high band-width, low-power, and small form-factor [1]. Also, it is a promising solution to overcome the scaling limit [2]. Demands for higher density and lower power continue to increase, especially in server applications. Currently, in order to increase the module density, more DRAM chips are simply added. However, this results in increased power waste due to duplication of circuit components.

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