This paper describes a direct phase-shift measurement system with transmitted deep-UV illumination for phase shifting mask (PSM) using a lateral shearing interferometer system. This interferometer has new structure developed for this purpose. The mirror mount of the interferometer is made of SiC ceramics that promote stability against vibration and ambient temperature drift. The illumination employs a xenon mercury arc lamp that has a spectrum close to the wavelength of KrF excimer laser. The repeatability of measurements is 0.5 degree in 3 sigma. The system can measure a small pattern down to 1 μm with an alternating type PSM with the objective of N.A.=0.4. Influence of incident angle of illumination on phase-shift measurement is investigated by experiment. The results show similar effects with simulation for circular illumination. The phase-shift measurement results on quartz step meet well with a calculation from step height and known refractive index including the effect of incident angle of illumination. The deep-UV measurement results also have good correlation with calculations from the results with another direct phase-shift measurement system that wavelength is 365nm. The simulation for focus latitude of alternating type PSMs agree with the experimental results of wafer exposure and the phase measurement. The accuracy of this system is sufficient for application to development of phase shift mask process.