Three-dimensional computation of the thermal parameters of multiple-gate power FETs

The paper discusses a 3D numerical approach to the computation of the thermal parameters of multiple-finger semiconductor devices. The analysis relies upon an electrical analogy of the temperature field and makes use of the actual physical dimensions of all electrodes. The thermal nonlinearity of real devices is taken into account. The numerical results are supported by comparison with the results of an infrared thermal scanning of a 2 mm MESFET.