论文信息 - Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs - 字舞流文

Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs

A. Agarwal | S. Ryu | S. Krishnaswami | J. Richmond | J. Palmour | C. Scozzie | R. Stahlbush | C. Capell | B. Geil | D. Katsis