Characterization of Si-on-insulator buried layers by FTIR and scatterometry

Non-destructive uniformity and defect control is an essential requirement for yield performance improvement and cost reduction of Silicon-on-Insulator (SOI) materials. To maximize performance and minimize production costs, it is critical to maintain a tight control over the oxygen implant dose. This has proven to be particularly true for the most advanced low dose SIMOX processes. Advanced FTIR reflectance spectroscopy and scatterometry have been used to characterize the buried layers of SOI materials and to relate unambiguously the process dose variations and corresponding changes of IR reflectance spectra.