Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's

A novel masterslice MMIC design approach employing a 3-D MMIC structure is described using a highly-integrated 17-24 GHz GaAs single-chip receiver and a 7-10 GHz Si reactive-impedance-matching amplifier, which are the most recent devices fabricated with our process. This approach considerably reduces TAT and manufacturing costs.

[1]  H. Ichino,et al.  18-GHz 1/8 dynamic frequency divider using Si bipolar technologies , 1989 .

[2]  Tsuneo Tokumitsu,et al.  Multilayer MMIC using a 3 mu m*3-layer dielectric film structure , 1990, IEEE International Digest on Microwave Symposium.

[3]  Tsuneo Tokumitsu,et al.  Multilayer MMIC branch-line coupler and broad-side coupler , 1992, IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers.

[4]  T. Tokumitsu,et al.  Three-dimensional MMIC technology: a possible solution to masterslice MMIC's on GaAs and Si , 1995 .

[5]  Ichihiko Toyoda,et al.  Three-dimensional passive circuit technology for ultra-compact MMICs , 1995, IMS 1995.

[6]  I. Toyoda,et al.  Three-dimensional passive circuit technology for ultra-compact MMICs , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.

[7]  Ichihiko Toyoda,et al.  Three-dimensional MMIC technology for multifunction integration and its possible application to masterslice MMIC , 1996, IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.

[8]  I. Toyoda,et al.  Highly integrated three-dimensional MMIC single-chip receiver and transmitter , 1996, IMS 1996.