Non-quasi-static model for MOSFET based on carrier-transit delay
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T. Ohguro | Mitiko Miura-Mattausch | M. Taguchi | S. Kumashiro | Dondee Navarro | S. Miyamoto | Hans Jurgen Mattausch | H. Ueno | N. Nakayama | M. Tanaka | T. Kage
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