Optical absorption in GaSe under high-density ultrashort laser pulses

Abstract Experimental results of the influence of high-density ultra short laser pulses of 60 fs duration ( E  = 1.98 eV) on the transient transmission change of thick (0.86, 1.92, 2.32 mm) GaSe crystals are reported. Two peculiarities of the differential transmission change – a significant absorption at Δ t  = 0 (zero time delay between pump and probe pulses) and an induced absorption at Δ t  = 1.5 ps (pump pulse precedes probe pulse) are discussed. The strong absorption at Δ t  = 0 is identified as due to two-photon absorption. The estimated value of the two-photon absorption coefficient at low densities of excitation (less than ∼3 mJ/cm 2 ) is β 1  ≈ 3 × 10 −10 cm/W. On increasing the excitation density from ∼3 to ∼16 mJ/cm 2 the two-photon absorption coefficient decreases to β 2  ≈ 1 × 10 −10 cm/W. The induced absorption at Δ t  = 1.5 ps is assigned to the non-equilibrium free carriers absorption. The estimated value of the absorption cross-section for the free carriers is σ  ∼ (4–6) × 10 −19 cm 2 .

[1]  N. Fernelius,et al.  Properties of gallium selenide single crystal , 1994 .

[2]  N. V. Shevchenko,et al.  Nonohmic hopping conductivity in semimagnetic semiconductor p-Mn x Hg 1-x Te , 1990 .

[3]  M. Schlüter The electronic structure of GaSe , 1973 .

[4]  Heinrich Kurz,et al.  Generation of coherent phonons in condensed media , 1992 .

[5]  Kerim R. Allakhverdiev,et al.  Two-photon absorption of femtosecond laser pulses in GaS crystals , 1998 .

[6]  日本物理学会 International Conference on the Physics of Semiconductors , 1966 .

[7]  Peter G. Schunemann,et al.  Two-photon absorption in GaSe and CdGeAs2 , 1998 .

[8]  Robert R. Alfano,et al.  Time-resolved picosecond absorption spectroscopy of the layered compound gallium selenide , 1982 .

[9]  J. H. Bechtel,et al.  Two-photon absorption in semiconductors with picosecond laser pulses , 1976 .

[10]  G. Račiukaitis,et al.  Giant nonlinear losses in GaSe crystals under double two-photon resonant conditions. Valence band structure from induced free carrier absorption , 1991 .

[11]  D. Suhre,et al.  Far-infrared conversion materials: Gallium selenide for far-infrared conversion applications , 1998 .

[12]  Keith A. Nelson,et al.  Impulsive stimulated scattering: General importance in femtosecond laser pulse interactions with matter, and spectroscopic applications , 1985 .

[13]  C. Klingshirn Nonlinear optics and dynamics in passive semiconductors , 1990 .

[14]  Staehli,et al.  Mott transition of the excitons in GaSe. , 1989, Physical review. B, Condensed matter.

[15]  T. Bridges,et al.  Picosecond study of near-band-gap nonlinearities in GaInAsP , 1986 .

[16]  S. Namba,et al.  Luminescence due to Exciton-Electron and Exciton-Exciton Collisions in GaSe , 1976 .

[17]  R. Kalia,et al.  Universal behavior of exchange-correlation energy in electron-hole liquid , 1982 .