High performance 25 nm FDSOI devices with extremely thin silicon channel

We demonstrate 25 nm mid-gap metal gate fully-depleted silicon on insulator (FDSOI) devices with the highest reported drive current for a single-gate PMOS device (I/sub on/=789 /spl mu/A//spl mu/m and I/sub off/=27 nA//spl mu/m for V/sub gs/-V/sub t/=1.25 V). We observe electron and hole mobility degradation for very thin channels (/spl sim/7 nm). Devices show good hot carrier and gate dielectric reliability.