Pseudomorphic GaInP Schottky Diode On InP

GaInP material has been used as a high gap semiconductor on InP to fabricate Schottky diodes. The experimental result shows that the device exhibits good electrical properties when the ternary strained layer is below the critical thickness. The best device is obtained with a Gallium composition of 25%, a GaInP thickness of 100 A, and has a barrier height of 0.73 eV, an ideality factor of 1.1 and a reverse current of 0.3 nA at -1V.