Computer Modeling of Radiation Hard AlGaAs Heterojunction Photodiode Structures
暂无分享,去创建一个
[1] H. Gummel,et al. Large-signal analysis of a silicon Read diode oscillator , 1969 .
[2] J.R. Hauser,et al. A computer analysis of heterojunction and graded composition solar cells , 1977, IEEE Transactions on Electron Devices.
[3] H. C. Casey,et al. Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV , 1975 .
[4] M. Ettenberg,et al. Interfacial recombination at /AlGa/As/GaAs heterojunction structures , 1976 .
[5] D. Rode. How much Al in the AlGaAs–GaAs laser? , 1974 .
[6] D. B. Wittry,et al. Investigation of minority‐carrier diffusion lengths by electron bombardment of Schottky barriers , 1978 .
[7] L. R. Dawson,et al. Transient effects of ionizing radiation in Si, InGaAsP, GaAlSb, and Ge photodiodes , 1980 .