Magneto-resistance effect in InSb thin film grown using molecular beam epitaxy

Abstract The magneto-resistance effect in InSb thin films grown on semi-insulating GaAs (1 0 0) surface using molecular beam epitaxy was studied, along with the effect of Si doping. The temperature dependence of the resistivity in the InSb thin films with high electron mobility decreased significantly when Si was used as a donor impurity. Consequently, InSb thin film grown using MBE can be used as a highly sensitive magneto-resistance element suitable for such applications as magnetic sensing.