Impact of Parameter Variations and Random Dopant Fluctuations on Short-Channel Fully Depleted SOI MOSFETs With Extremely Thin BOX
暂无分享,去创建一个
T. Hiramoto | N. Sugii | T. Ohtou | T. Hiramoto | N. Sugii | T. Ohtou
[1] S. Maegawa,et al. Silicon on thin BOX: a new paradigm of the CMOSFET for low-power high-performance application featuring wide-range back-bias control , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
[2] A. Toriumi,et al. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's , 1994 .
[3] M. Hane,et al. Investigation of realistic dopant fluctuation induced device characteristics variation for sub-100 nm CMOS by using atomistic 3D process/device simulator , 2002, Digest. International Electron Devices Meeting,.
[4] Vivek De,et al. Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage , 2002, 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315).
[5] Toshiro Hiramoto,et al. Variable Body Effect Factor Fully Depleted Silicon-On-Insulator Metal Oxide Semiconductor Field Effect Transistor for Ultra Low-Power Variable-Threshold-Voltage Complementary Metal Oxide Semiconductor Applications , 2004 .
[6] Dimitri A. Antoniadis,et al. Short-channel effects in deep-submicrometer SOI MOSFETS , 1993, Proceedings of 1993 IEEE International SOI Conference.
[7] M. Ieong,et al. Monte Carlo modeling of threshold variation due to dopant fluctuations , 1999, 1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326).
[8] Makoto Takamiya,et al. Separation of effects of statistical impurity number fluctuations and position distribution on Vth fluctuations in scaled MOSFETs , 2000 .
[9] K. Ohuchi,et al. Impact of BOX scaling on 30 nm gate length FD SOI MOSFET , 2005, 2005 IEEE International SOI Conference Proceedings.
[10] K. Takeuchi,et al. Channel engineering for the reduction of random-dopant-placement-induced threshold voltage fluctuation , 1997, International Electron Devices Meeting. IEDM Technical Digest.
[11] Makoto Takamiya,et al. Threshold voltage fluctuations induced by statistical ‘position’ and ‘number’ impurity fluctuations in bulk MOSFETs , 2000 .
[12] T. Hiramoto,et al. Threshold-Voltage Control of AC Performance Degradation-Free FD SOI MOSFET With Extremely Thin BOX Using Variable Body-Factor Scheme , 2007, IEEE Transactions on Electron Devices.
[13] J. Meindl,et al. The impact of intrinsic device fluctuations on CMOS SRAM cell stability , 2001, IEEE J. Solid State Circuits.
[14] S. Saini,et al. Quantum mechanical enhancement of the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).