论文信息 - Experimental investigation of p-Si (100) surface modified by ion implantation

Experimental investigation of p-Si (100) surface modified by ion implantation

Surface strengthening and residual stress in Ti+ implanted p-Si (100) wafers are investigated by scanning electron microscopy, X-ray diffraction, nano-indentation and micro-Raman spectroscopy. The experimental results revealed that the crystallinity decreases gradually in transition area, whose structure varies continuously from the crystalline Si to amorphous phase which appears in ion implanted area. Moreover, the hardness and elastic modulus increase gradually in the transition area. Compressive intrinsic-stress that comes from lattice mismatch between the implanted layer and Si substrate is one factor giving rise to residual stresses.

Yilan Kang | Zhenkun Lei | Hai Yun | X. M. Pan | Z. X. Mu

[1] Sergio Jiménez-Sandoval,et al. Micro-Raman spectroscopy: a powerful technique for materials research , 2000 .

[2] G. H. Kaufmann,et al. Evaluation of residual deformations generated by a pulsed ion implanter using interferometric phase measurement , 1995 .

[3] M. Cardona,et al. Piezo-Raman measurements and anharmonic parameters in silicon and diamond. , 1990, Physical review. B, Condensed matter.

[4] Y. Fu,et al. Residual stress in amorphous and nanocrystalline Si films prepared by PECVD with hydrogen dilution , 2005 .

[5] S. Prawer,et al. Crack-arresting compression layers produced by ion implantation , 2006 .

[6] T. Motooka,et al. HOMOGENEOUS AMORPHIZATION IN HIGH-ENERGY ION IMPLANTED SI , 1997 .

[7] Lewis,et al. Defect-induced nucleation and growth of amorphous silicon. , 1996, Physical review. B, Condensed matter.

[8] R. Kesavamoorthy,et al. Amorphization of Si (100) under O+ implantation studied by spectroscopic ellipsometry , 2005 .

[9] D. M. Mattox. Ion plating — past, present and future , 2000 .

[10] W. V. Spengen,et al. The investigation of microsystems using Raman spectroscopy , 2001 .