An optimized 850 degrees C low-pressure-furnace reoxidized nitrided oxide (ROXNOX) process

The electrical characteristics of thin (10 nm) MOS gate dielectrics formed at 850 degrees C by low-pressure furnace nitridation of SiO/sub 2/ followed by an oxygen anneal (reoxidation) are described. The ROXNOX process is demonstrated to be readily scalable from 950 degrees C to 850 degrees C through the use of higher partial pressures in the nitridation and reoxidation steps, resulting in the same quality dielectric formed with a lower D/sub t/ product. Electrical characterization results of capacitors and transistors with the 850 degrees C ROXNOX dielectric are presented. Reliability of the 850 degrees C ROXNOX dielectric is demonstrated through Fowler-Nordheim and channel hot-electron stressing results. >

[1]  Chun-Yen Chang,et al.  Study of Electrical Characteristics on Thermally Nitrided SiO2 (Nitroxide) Films , 1984 .

[2]  G. Lo,et al.  Study of inversion layer mobility in metal‐oxide‐semiconductor field‐effect transistors with reoxidized nitrided oxides , 1990 .

[3]  J. Plummer,et al.  Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces , 1980 .

[4]  A.T. Wu,et al.  Gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown in nitrided and reoxidized nitrided oxides , 1989, IEEE Electron Device Letters.

[5]  Charles G. Sodini,et al.  Optimization of low-pressure nitridation/reoxidation of SiO/sub 2/ for scaled MOS devices , 1988 .

[6]  J. Raffel,et al.  Properties of thin oxynitride gate dielectrics produced by thermal nitridation of silicon dioxide , 1980, 1980 International Electron Devices Meeting.

[7]  T. Hori,et al.  The impact of ultrathin nitrided oxide gate-dielectrics on MOS device performance improvement , 1989, International Technical Digest on Electron Devices Meeting.

[8]  T.T.L. Chang,et al.  Oxidized-nitridized oxide (ONO) for high performance EEPROMs , 1982, 1982 International Electron Devices Meeting.

[9]  T. Nakamura,et al.  Advantages of thermal nitride and nitroxide gate films in VLSI process , 1982, IEEE Transactions on Electron Devices.

[10]  F.L. Terry,et al.  IVB-2 Inversion layer mobility of MOSFET's with Nitrided Oxide gate dielectrics , 1985, IEEE Transactions on Electron Devices.

[11]  Charles G. Sodini,et al.  A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon , 1989 .

[12]  Hiroshi Iwai,et al.  Hot carrier related phenomena for n- and p-MOSFETs with nitrided gate oxide by RTP , 1989, International Technical Digest on Electron Devices Meeting.

[13]  M. M. Moslehi,et al.  Thermal Nitridation of Si and SiO/sub 2/ for VLSI , 1985 .

[14]  C. Sodini,et al.  Radiation effects in low‐pressure reoxidized nitrided oxide gate dielectrics , 1988 .

[15]  S. Senturia,et al.  Radiation effects in nitrided oxides , 1983, IEEE Electron Device Letters.

[16]  C. Hu,et al.  A simple method to characterize substrate current in MOSFET's , 1984, IEEE Electron Device Letters.

[17]  Takashi Ito,et al.  Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia Gas , 1980 .

[18]  Stephen Aplin Lyon,et al.  Capture and tunnel emission of electrons by deep levels in ultrathin nitrided oxides on silicon , 1984 .

[19]  Rajsekhar Jayaraman,et al.  Reliability and 1/f noise properties of MOSFETs with nitrided oxide gate dielectrics , 1988 .

[20]  S.K. Lai,et al.  Electrical properties of nitrided-oxide systems for use in gate dielectrics and EEPROM , 1983, 1983 International Electron Devices Meeting.

[21]  A. Wu,et al.  Nitridation induced surface donor layer in silicon and its impact on the characteristics of n- and p-channel MOSFETs , 1989, International Technical Digest on Electron Devices Meeting.