论文信息 - 0.1-/spl mu/m InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD

0.1-/spl mu/m InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD

High-performance 0.1-/spl mu/m-gate InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD have been developed, and it has been found that the InP-recess-etch stopper does not degrade device performance and does improve the uniformity of the threshold voltage and the designability of the device structure. InAlAs/InGaAs HEMTs on an InP substrate are thus applicable to ultra-high-speed digital ICs for future communication systems.

Hiroshi Ito | T. Enoki | Yasunobu Ishii | K. Ikuta

[1] T. Enoki,et al. 0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects , 1994 .

[2] M. Suzuki,et al. Pseudomorphic n-InGaP/InGaAs/GaAs grown by MOVPE for HEMT LSIs , 1991 .

[3] G. Desalvo,et al. Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs , Al0.3Ga0.7As , In0.2Ga0.8As , In0.53Ga0.47As , In0.52Al0.48As , and InP , 1992 .

[4] T. Kobayashi,et al. Device technologies for InP-based HEMTs and their application to ICs , 1994, Proceedings of 1994 IEEE GaAs IC Symposium.

[5] Y. Imai,et al. A 16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation technique , 1994, Proceedings of 1994 IEEE GaAs IC Symposium.

[6] R. Lai,et al. A V-BAND MONOLITHIC InP HEMT DOWNCONVERTER , 1993 .

[7] D. Greenberg,et al. A recessed-gate InAlAs/n/sup +/-InP HFET with an InP etch-stop layer , 1992, IEEE Electron Device Letters.

[8] T. Noda,et al. InGaAs/InAlAs HEMT with a strained InGaP Schottky contact layer , 1993, IEEE Electron Device Letters.

[9] R. Lai,et al. A V-band monolithic InP HEMT down converter [for satellite communication] , 1993, 15th Annual GaAs IC Symposium.

[10] Masaaki Tomizawa,et al. General-Purpose Device Simulation System with an Effective Graphic Interface , 1992 .