Stacked semiconductor device and manufacturing method thereof

PURPOSE: A stacked semiconductor device and manufacturing method thereof are provided to extend a size of cache without widening a chip area of microprocessor by controlling DRAM(Dynamic Random Access Memory) with a memory controller. CONSTITUTION: A second chip is arranged on a first chip through a first Through Silicon Via(TSV1). The second chip includes a first memory and memory controller(30). The first memory and memory controller are controlled each by the first chip. A second memory is arranged on the second chip through a second Through Silicon Via(TSV2). The second memory is controlled by the memory controller.